Sep 19, 2010 18:29
13 yrs ago
English term
Юрий
Uds
English to Russian
Tech/Engineering
Physics
Здравствуйте. Может кому-нибудь встречалось переводить слово Uds. Оно встречается в следующем контексте:
-Haet resistor(number of units, rated
voltage, service voltage, vats per unit)
Uds.
V.
W
….Uds,
230V
…..W
-Haet resistor(number of units, rated
voltage, service voltage, vats per unit)
Uds.
V.
W
….Uds,
230V
…..W
Proposed translations
(Russian)
| 1 +1 | напряжение стока |
svetlana cosquéric
|
| 4 -2 | напряжение от слива (дренажа) до источника |
Michael Kislov
|
Proposed translations
+1
30 mins
svetlana cosquéric
France
France
Native in Russian
Specializes in field
France
Engineering, medicine, chemistry
Native in: Russian 
Works in: Russian to English, English to Russian, French to Russian
Related KudoZ points
:
12
напряжение стока
In order to decrease the phase noise, the 22kohm bias resistors should be replaced by ...... The drain voltage (Uds) may be anywhere in the range 2....
www.microwave.gr/content/view/86/110/ -
Here is how bias resistors should be connected to a UDS for both 4-wire RS422/RS485 and 2-wire RS485 connections....
http://ltxfaq.custhelp.com/app/answers/detail/a_id/1608/~/bi...
www.microwave.gr/content/view/86/110/ -
Here is how bias resistors should be connected to a UDS for both 4-wire RS422/RS485 and 2-wire RS485 connections....
http://ltxfaq.custhelp.com/app/answers/detail/a_id/1608/~/bi...
Peer comment(s):
| agree |
mk_lab
: Наиболее близкая версия, но все равно, сомнительная. Без контекста не разобраться... Возможно, там таблица, в которой приведен этот параметр (для полевых транзисторов). Но он слабо коррелирует с остальными в перечне. Аскеру надо-бы потщательнее быть ;)
10 hrs
|
|
Спасибо mk_lab! Контексту бы конечно не помешало бы...
|
-2
55 mins
Michael Kislov
Russian Federation
Russian Federation
Native in Russian
Russian Federation
Legal & Financial since 1999
Native in: Russian
Works in: Russian to English, English to Russian
напряжение от слива (дренажа) до источника
As an example, Figs. 3 and 4 show results of Monte Carlo simulation of InGaAS HEMT near
pinchoff operation at source-to-gate voltages UG1 = −0.2 V and UG2 = 0.6 V. The conduction
band profiles along the channel are presented in Fig. 3 at increasing values of the applied drainto-
source voltage UDS.
http://iopscience.iop.org/1742-6596/193/1/012081/pdf/1742-65...
--------------------------------------------------
Note added at 1 hr (2010-09-19 19:30:28 GMT)
--------------------------------------------------
или от стока до источника
pinchoff operation at source-to-gate voltages UG1 = −0.2 V and UG2 = 0.6 V. The conduction
band profiles along the channel are presented in Fig. 3 at increasing values of the applied drainto-
source voltage UDS.
http://iopscience.iop.org/1742-6596/193/1/012081/pdf/1742-65...
--------------------------------------------------
Note added at 1 hr (2010-09-19 19:30:28 GMT)
--------------------------------------------------
или от стока до источника
Peer comment(s):
| disagree |
Igor Savenkov
: в транзисторах нет "слива"
1 min
|
| disagree |
Natalie
: Это примерно как от обеда до забора
1 hr
|
Discussion
http://www.google.ru/search?hl=ru&safe=off&q=Uds drain to so...
Но контекст, который вы привели - не контекст.