tail current

Polish translation: ogon prądowy

12:39 Mar 21, 2020
English to Polish translations [PRO]
Tech/Engineering - Electronics / Elect Eng / power electronics
English term or phrase: tail current
To reduce tail current and thereby switching loss, IGBTs are principally designed so as to reduce 1) the lifetime of minority carriers and 2) the amount of holes injected from the collector. However, both these techniques cause a rise in on-state voltage. Therefore, IGBTs are designed with optimum trade-offs among these characteristics according to their intended applications.
Robert Pranagal
Local time: 14:43
Polish translation:ogon prądowy
Explanation:
IMHO.
Selected response from:

Arrakis
Poland
Local time: 14:43
Grading comment
dzięki
4 KudoZ points were awarded for this answer



Summary of answers provided
4ogon prądowy
Arrakis
2prąd końcowy
Frank Szmulowicz, Ph. D.


  

Answers


57 mins   confidence: Answerer confidence 2/5Answerer confidence 2/5
prąd końcowy


Explanation:
What is the tail current of an IGBT?
Typical collector current and collector-emitter voltage waveforms during turn-off
Typical collector current and collector-emitter voltage waveforms during turn-off
The IGBT is a type of power transistor that operates in bipolar mode because of the P layer formed on the drain side of a MOSFET. The IGBT uses a phenomenon called conductivity modulation that exhibits a reduction in the resistivity of the high-resistance N- drift region at turn-on when holes are injected from this P region.

On-state voltage can be reduced because of conductivity modulation, but the IGBT needs to remove minority carriers from the N- drift region when it turns off.

When the IGBT begins to turn off, minority carriers are swept out to external circuitry. When the collector-emitter voltage (VCE) of the IGBT has risen to a certain level (i.e., after the depletion region has expanded), minority carriers contribute to internal recombination current. This current is called tail current. Because tail current is the collector current with a high VCE voltage being applied, it is one of the significant contributors to switching loss.

To reduce tail current and thereby switching loss, IGBTs are principally designed so as to reduce 1) the lifetime of minority carriers and 2) the amount of holes injected from the collector. However, both these techniques cause a rise in on-state voltage. Therefore, IGBTs are designed with optimum trade-offs among these characteristics according to their intended applications.
https://toshiba.semicon-storage.com/content/dam/toshiba-ss/s...
https://toshiba.semicon-storage.com/us/semiconductor/knowled...

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Note added at 1 hr (2020-03-21 14:15:17 GMT)
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Według definicji
minority carriers contribute to internal recombination current
wkład nośników mniejszościowych do wewnętrznego prądu rekombinacji

Frank Szmulowicz, Ph. D.
United States
Local time: 08:43
Specializes in field
Native speaker of: Native in EnglishEnglish, Native in PolishPolish
PRO pts in category: 919
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2 days 7 hrs   confidence: Answerer confidence 4/5Answerer confidence 4/5
ogon prądowy


Explanation:
IMHO.

Arrakis
Poland
Local time: 14:43
Specializes in field
Native speaker of: Native in PolishPolish
PRO pts in category: 1171
Grading comment
dzięki
Login to enter a peer comment (or grade)



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